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IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 679-682

Scalable large-signal device model for high power-density AlGaN/GaN HEMTs on SiC

(3) Lee, Jong Wook a Lee, Sungjae a Webb, Kevin J a

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; TRANSCONDUCTANCE;

ISOTHERMAL BIAS CONTOURS; PARAMETERIZED MODEL COEFFICIENTS; SCALABLE LARGE-SIGNAL DEVICE MODEL; SELF-HEATING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035686560 PISSN: 0149645X EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (19)

References (11)

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2
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