Large signal modeling of AlGaN/GaN HEMTs with Psat>4 W/mm at 30 GHz suitable for broadband power applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 451-454

  Van Raay, F ^a   Quay, R ^a   Kiefer, R ^a   Schlechtweg, M ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; BROADBAND AMPLIFIERS; COMPUTER SIMULATION; HIGH ELECTRON MOBILITY TRANSISTORS;

MULTI-BAND AMPLIFIERS;

POWER AMPLIFIERS;

EID: 0043166426     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K. Kasahara, et al., "Ka-band 2.3W Power AlGaN/GaN Heterojunction FET", Intl. Electron Dev. Meeting 2002, San Francisco, December 2002, pp. 677-680.
2. R. Kiefer, et al., "AlGaN/GaN HEMTs for Power Applications up to 40 GHz", Proc. IEEE Lester Eastman Conf. High Perf. Dev. 2002, Newark, pp. 502-504.
3. R. Quay, et al., "AlGaN/GaN HEMTs on SiC Operating at 40 GHz", Intl. Electron Dev. Meeting 2002, San Francisco, pp. 673 - 676.
4. F. van Raay, G. Kompa, "A 40 GHz Large-Signal Double-Reflectometer Waveform Measurement System Designed for Load-Pull Applications", 26th European Microwave Conference, Prague, 1996, pp.657-661.
5. I. Schmale, G. Kompa, "A Symmetric Non-Quasi-Static Large-Signal FET Model with a Truly Consistent Analytic Determination from DC- and S-Parameter Data", 29th European Microwave Conference, Munich, October 1999, pp. 258-261.
6. I. Angelov, L. Bengtsson, M. Garcia, "Extensions of the Chalmers Nonlinear HEMT and MESFET Model", IEEE Trans. on MTT, vol. 44, no. 10, Oct. 1996, pp. 1664-1674.