Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere

Thin Solid Films

Volumn 516, Issue 17, 2008, Pages 5809-5813

  Wang, M H ^a   Onai, Y ^a   Hoshi, Y ^a   Lei, H ^a   Kondo, T ^a   Uchida, T ^a   Singkarat, S ^b   Kamwanna, T ^b   Dangtip, S ^c   Aukkaravittayapun, S ^d   Nishide, T ^e   Tokiwa, S ^e   Sawada, Y ^a  

^a TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^b CHIANG MAI UNIVERSITY   (Thailand)

^c MAHIDOL UNIVERSITY   (Thailand)

^d NATIONAL METAL AND MATERIALS TECHNOLOGY CENTER   (Thailand)

^e NIHON UNIVERSITY   (Japan)

Author keywords

Amorphous ITO film; Electrical properties; Thermal crystallization; Water vapor

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; PARTIAL PRESSURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTER DEPOSITION; TEMPERATURE CONTROL; WATER VAPOR;

AMORPHOUS INDIUM TIN OXIDE FILMS; THERMAL CRYSTALLIZATION;

AMORPHOUS FILMS;

EID: 44349178249     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.041     Document Type: Article

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