Nanoindentation investigation of HfO2 and Al2O 3 films grown by atomic layer deposition

Journal of the Electrochemical Society

Volumn 155, Issue 7, 2008, Pages

  Tapily, K ^a,b,e   Jakes, J E ^c,d   Stone, D S ^c,d   Shrestha, P ^a,b,e   Gu, D ^a,b,e   Baumgart, H ^a,b,e   Elmustafa, A A ^a,b  

^a Old Dominion University ^*  (United States)

^b THOMAS JEFFERSON NATIONAL ACCELERATOR FACILITY   (United States)

^c UNIVERSITY OF WISCONSIN MADISON   (United States)

^d FOREST PRODUCTS LABORATORY   (United States)

^e ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRIC BREAKDOWN; FILM GROWTH; GATE DIELECTRICS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; NANOINDENTATION;

CONTINUOUS STIFFNESS METHOD; GATE LEAKAGE CURRENTS; PROCESS INTEGRATION;

THIN FILMS;

EID: 44349143525     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2919106     Document Type: Article

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