A selective H2 sensor implemented using Ga2O3 thin-films which are covered with a gas-filtering SiO2 layer

Sensors and Actuators, B: Chemical

Volumn 36, Issue 1-3, 1996, Pages 297-302

  Fleischer, M ^a   Seth, M ^b   Kohl, C D ^b   Meixner, H ^a  

^a SIEMENS AG   (Germany)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

Ga2O3 thin films; Gas filtering SiO2 layer; H2 sensor

Indexed keywords

AMORPHOUS MATERIALS; DEPOSITION; HYDROGEN; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; SPUTTERING; THIN FILMS;

GALLIUM OXIDE; GAS FILTERING; GAS SENSITIVITY;

CHEMICAL SENSORS;

EID: 0030258382     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(97)80085-8     Document Type: Article

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