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Volumn 310, Issue 12, 2008, Pages 2970-2976
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Development of oxygen transport model in Czochralski growth of silicon crystals
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Author keywords
A1. Computer simulation; A1. Mass transfer; A2. Czochralski method; B1. Silicon
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Indexed keywords
COMPUTER SIMULATION;
CRYSTAL GROWTH FROM MELT;
OXYGEN;
SILICON;
OXYGEN CONCENTRATION;
OXYGEN TRANSPORT;
TURBULENT MELT FLOW;
MASS TRANSFER;
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EID: 44149127440
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.03.002 Document Type: Article |
Times cited : (79)
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References (8)
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