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Volumn 282, Issue 1-2, 2005, Pages 49-59
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An analysis of temperature distribution near the melt-crystal interface in silicon Czochralski growth with a transverse magnetic field
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Author keywords
A1. Computer simulation; A1. Interfaces; A1. Magnetic fields; A2. Magnetic field assisted Czochralski method; B2. Semiconducting silicon
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Indexed keywords
COMPUTER SIMULATION;
MAGNETIC FIELDS;
MATHEMATICAL MODELS;
NUMERICAL ANALYSIS;
SEMICONDUCTING SILICON;
TEMPERATURE DISTRIBUTION;
CRYSTAL-PULLING RATES;
GLOBAL ANALYSIS;
INTERFACES;
MAGNETIC FIELD ASSISTED CZOCHRALSKI METHODS;
CRYSTAL GROWTH FROM MELT;
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EID: 22744431615
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.05.002 Document Type: Article |
Times cited : (52)
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References (15)
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