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Volumn 84, Issue 2, 1995, Pages 187-192
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Reactivity of III-V and II-VI semiconductors toward hydrogen: surface modification and evolution in air
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHEMICAL MODIFICATION;
HYDROGEN;
ION IMPLANTATION;
OXIDATION;
PLASMAS;
SEMICONDUCTING CADMIUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
STOICHIOMETRY;
SURFACE TREATMENT;
CADMIUM TELLURIDE;
DEOXIDATION;
ION ENRICHMENT;
KAUFMAN SOURCE;
SURFACE CHEMICAL STATE;
SEMICONDUCTOR MATERIALS;
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EID: 0029250970
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/0169-4332(94)00477-3 Document Type: Article |
Times cited : (14)
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References (20)
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