Bilayer processing for an enhanced organic-electrode contact in ultrathin bottom contact organic transistors

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Park, Jeongwon ^a   Yang, Richard D ^a   Colesniuc, Corneliu N ^a   Sharoni, Amos ^a   Jin, Sungho ^a   Schuller, Ivan K ^a   Trogler, William C ^a   Kummel, Andrew C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; PHOTORESISTS; THICKNESS MEASUREMENT; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

FIELD EFFECT MOBILITY; ORGANIC THIN FILM TRANSISTORS (OTFT); PHTHALOCYNAINES;

ELECTRODES;

EID: 44049085338     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2918121     Document Type: Article

References (20)

1. C. D. Dimitriakopoulous and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0. CO;2-9 14, 99 (2002).
2. M. Bouvet, Anal. Bioanal. Chem. ABCNBP 1618-2642 10.1007/s00216-005-3257- 6 384, 366 (2006).
3. K. A. Miller, R. D. Yang, M. J. Hale, J. Park, B. Fruhberger, C. N. Colesniuc, I. K. Schuller, A. C. Kummel, and W. C. Trogler, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp053104a 110, 361 (2006).
4. F. I. Bohrer, A. Sharoni, C. Colesniuc, J. Park, I. K. Schuller, A. C. Kummel, and W. C. Trogler, J. Am. Chem. Soc. JACSAT 0002-7863 10.1021/ja0689379 129, 5640 (2007).
5. R. D. Yang, B. Fruhberger, J. Park, and A. C. Kummel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2175491 88, 074104 (2006).
6. R. D. Yang, T. Gredig, C. N. Colesniuc, J. Park, I. K. Schuller, W. C. Trogler, and A. C. Kummel, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2749092 90, 263506 (2007).
7. S. J. Zilker, C. Detcheverry, E. Cantatore, and D. M. de Leeuw, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1394718 79, 1124 (2001).
8. R. D. Yang, J. Park, C. N. Colesniuc, I. K. Schuller, W. C. Trogler, and A. C. Kummel, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2767633 102, 034515 (2007).
9. G. Horowitz, J. Mater. Res. JMREEE 0884-2914 10.1557/JMR.2004.0266 19, 1946 (2004).
10. R. Schmechel and H. von Seggern, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.200404343 201, 1215 (2004).
11. A. Talin, G. F. Cardinale, T. I. Wallow, P. Dentinger, S. Pathak, D. Chinn, and D. R. Folk, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1689308 22, 781 (2004).
12. L. An, Y. Zheng, K. Li, P. Luo, and Y. Wu, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1978893 23, 1603 (2005).
13. M. J. Rooks, C. C. Eugster, J. A. del Alamo, G. L. Snider, and E. L. Hu, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.585656 9, 2856 (1991).
14. B. P. Van der Gaag and A. Scherer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.102772 56, 481 (1990).
15. T. Ishii, H. Nozawa, and T. Tamamura, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118500 70, 1110 (1997).
16. C. W. Miller, A. Sharoni, G. Liu, C. N. Colesniuc, B. Fruhberger, and I. K. Schuller, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.72.104113 72 104113 (2005).
17. See EPAPS Document No. E-APPLAB-92-098817 for the OMBE deposition processes, molecular structure and surface morphology of CuPc. For more information on EPAPS, see http://www.aip.org/pubservs/epaps/.html.
18. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998).
19. S. Luan and G. W. Neudeck, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351809 72, 766 (1992).
20. Z. Bao, A. J. Lovinger, and A. Dodabalapur, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116841 69, 3066 (1996).