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Volumn 52, Issue 5 III, 2005, Pages 1964-1967

Compensation processes in CdTe-based compounds

Author keywords

Charge transport properties; Deep traps; Detectors

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL LATTICES; FERMI LEVEL; RADIATION DETECTORS; SPECTROSCOPIC ANALYSIS;

EID: 29144432219     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.856770     Document Type: Article
Times cited : (17)

References (10)
  • 1
    • 0037109905 scopus 로고    scopus 로고
    • Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe
    • S. H. Wei and S. B. Zhang, "Chemical trends of defect formation and doping limit in II-VI semiconductors: the case of CdTe," Phys. Rev. B, vol. 66, pp. 155211-155215, 2002.
    • (2002) Phys. Rev. B , vol.66
    • Wei, S.H.1    Zhang, S.B.2
  • 6
    • 4644246570 scopus 로고    scopus 로고
    • CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications
    • C. Szeles, "CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications," Phys. Stat. Sol. (b), vol. 241, pp. 783-787, 2004.
    • (2004) Phys. Stat. Sol. (b) , vol.241 , pp. 783-787
    • Szeles, C.1
  • 7
    • 3342982459 scopus 로고    scopus 로고
    • Defect structure of high resistive CdTe:in prepared by vertical gradient freeze method
    • J. Franc, V. Babentsov, M. Fiederle, E. Belas, K. W. Benz, and P. Höschl, "Defect structure of high resistive CdTe:in prepared by vertical gradient freeze method," IEEE Trans. Nucl. Sci., vol. 51, pp. 1176-1180, 2004.
    • (2004) IEEE Trans. Nucl. Sci. , vol.51 , pp. 1176-1180
    • Franc, J.1    Babentsov, V.2    Fiederle, M.3    Belas, E.4    Benz, K.W.5    Höschl, P.6
  • 8
    • 0019937635 scopus 로고
    • Detailed characterization of deep centers in CdTe: Photoionization and thermal ionization properties
    • T. Takebe, J. Saraie, and H. Matsunami, "Detailed characterization of deep centers in CdTe: photoionization and thermal ionization properties," J. Appl. Phys, vol. 53, pp. 457-566, 1982.
    • (1982) J. Appl. Phys , vol.53 , pp. 457-566
    • Takebe, T.1    Saraie, J.2    Matsunami, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.