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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 882-889

Evaluation of InGaP/InGaAs/Ge triple-junction solar cell under concentrated light by simulation program with integrated circuit emphasis

(6) Nishioka, Kensuke a Takamoto, Tatsuya b Agui, Takaaki b Kaneiwa, Minoru b Uraoka, Yukiharu a Fuyuki, Takashi a

a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b SHARP CORPORATION (Japan)

Author keywords

Circuit simulation; Concentrated light; GaAs; Ge; InGaP; Multi junction solar cell; SPICE

Indexed keywords

ABERRATIONS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRODES; GERMANIUM; INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

CIRCUIT SIMULATION; CONCENTRATED LIGHT; INGAP; MULTI-JUNCTION SOLAR CELLS; SPICE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 2442600562 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.882 Document Type: Article

Times cited : (74)

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