High power(500V-70A) and high gain(44-47) 4H-SiC bipolar junction transistors

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1149-1152

  Zhang, J ^a   Alexandrov, P ^b   Zhao, J H ^a  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

Bipolar junction transistors (BJTs); Power transistors; Silicon carbide

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC RESISTANCE; GAIN CONTROL; LEAKAGE CURRENTS; OHMIC CONTACTS; OXIDATION; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

BIPOLAR JUNCTION TRANSISTORS (BJT); CURRENT GAIN; DRIFT LAYERS; POWER TRANSISTORS;

SILICON CARBIDE;

EID: 7644242553     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1149     Document Type: Conference Paper

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