On the characterization of a new type of oxide-confined 850 nm GaAs-based vertical-cavity surface-emitting laser

Optik

Volumn 119, Issue 8, 2008, Pages 373-378

  Mitani, S M ^a   Choudhury, P K ^b   Alias, M S ^a  

^a Telekom Research and Development Sdn Bhd   (Malaysia)

^b MULTIMEDIA UNIVERSITY   (Malaysia)

Author keywords

AlGaAs structures; Quantum well devices; VCSELs

Indexed keywords

ELECTROMAGNETISM; GALLIUM COMPOUNDS; OXIDES; SEMICONDUCTOR QUANTUM WELLS;

ALGAAS STRUCTURES; OXIDE CONFINED;

SURFACE EMITTING LASERS;

EID: 43449099163     PISSN: 00304026     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijleo.2006.12.007     Document Type: Article

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