Modeling type II InAs/GaSb superlattices using empirical tight-binding method: New aspects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5359, Issue , 2004, Pages 301-308

  Wei, Yajun ^a   Razeghi, Manijeh ^a   Brown, Gail J ^b   Tidrow, Meimei Z ^c  

^a Northwestern University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

Author keywords

ETBM; GaSb; InAs; Infrared; Interface; Mismatch; Segregation; Superlattices; Tight binding; Type II

Indexed keywords

MISMATCH; SUPPERLATTICE DESIGN; SUPPERLATTICES; TIGHT-BINDING METHOD; TYPE II;

APPROXIMATION THEORY; BINDING ENERGY; EIGENVALUES AND EIGENFUNCTIONS; ENERGY GAP; HAMILTONIANS; INFRARED RADIATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PARAMETER ESTIMATION; PROBLEM SOLVING; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

SUPERLATTICES;

EID: 4344714609     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.528297     Document Type: Conference Paper

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