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Applied Physics Letters

Volumn 74, Issue 3, 1999, Pages 377-379

Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation

(6) Komuro, Shuji a Katsumata, Tooru a Morikawa, Takitaro a Zhao, Xinwei b Isshiki, Hideo b Aoyagi, Yoshinobu b

a TOYO UNIVERSITY (Japan)

b INST OF PHYS AND CHEMICAL RESEARCH (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ERBIUM; FILM PREPARATION; LASER ABLATION; LIGHT EMISSION; OPTICAL VARIABLES MEASUREMENT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THIN FILMS;

ELECTRON HOLE PAIRS; ERBIUM DOPING LEVELS; NANOCRYSTALLINE SILICON THIN FILMS; TIME RESPONSE MEASUREMENT;

PHOTOLUMINESCENCE;

EID: 0033579762 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.123076 Document Type: Article

Times cited : (54)

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