MPPC technique for gate etch process monitoring using CD-SEM images and its validity verification

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 2, 2004, Pages 1144-1155

  Tanaka, Maki ^a   Shishido, Chie ^a   Takagi, Yuji ^a   Morokuma, Hidetoshi ^b  

^a HITACHI LTD   (Japan)

^b HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

Critical dimension scanning electron microscopy (CD SEM); Device property; Footing roundness; Gate control; Image analysis; Sidewall angle; Three dimensional evaluation

Indexed keywords

CRITICAL DIMENSION SCANNING ELECTRON MICROSCOPY (CD-SEM); DEVICE PROPERTY; FOOTING ROUNDNESS; GATE CONTROL; SIDEWALL ANGLES; THREE-DIMENSIONAL EVALUATION;

ATOMIC FORCE MICROSCOPY; ETCHING; IMAGE ANALYSIS; SEMICONDUCTOR DEVICE MANUFACTURE; SHRINKAGE; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

SCANNING ELECTRON MICROSCOPY;

EID: 4344663369     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536284     Document Type: Conference Paper

References (9)

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