Spectroscopic ellipsometry based scatterometry enabling 193nm litho and etch process control for the 110nm technology node and beyond

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5038 I, Issue , 2003, Pages 274-285

  Hingst, Thomas ^a   Marschner, Thomas ^a   Moert, Manfred ^a   Homilius, Jan ^a   Guevrement, Marco ^b   Hopkins, John ^b   Elazami, Assim ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

CD; DRAM; Gate control; Scatterometry; Spectroscopic ellipsometry

Indexed keywords

ELECTRON DEVICE MANUFACTURE; ETCHING; LITHOGRAPHY; NANOTECHNOLOGY; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

CRITICAL DIMENSION; ETCH PROCESS CONTROL; LITHOGRAPHY PROCESS CONTROL; SCATTEROMETRY; SPECTROSCOPID ELLIPSOMETRY;

ELLIPSOMETRY;

EID: 0141500262     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485011     Document Type: Conference Paper

References (8)

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