SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 76-79

Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices

(9) Wong, L H a Wong, C C a,b Ong, K K c Liu, J P d Chan, L d Rao, R d Pey, K L b,c Liu, L e Shen, Z X e

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b SINGAPORE MIT ALLIANCE (Singapore)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

d Chartd Semiconduct Mfg Ltd (Singapore)

e NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

Raman; Silicon germanium; Strained silicon; Thermal stability

Indexed keywords

RAMAN; SILICON GERMANIUM; STRAINED SILICON; SURFACE DEFECTS;

ANNEALING; EPITAXIAL GROWTH; MASS SPECTROMETRY; MICROELECTRONICS; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; STRAIN; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

HETEROJUNCTIONS;

EID: 4344659561 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.05.050 Document Type: Article

Times cited : (7)

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