Sub-50 nm isolated line and trench width artifacts for CD metrology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 647-656

  Tortonese, M ^a   Lorusso, G ^b   Blanquies, R ^a   Prochazka, J ^a   Grella, L ^b  

^a VLSI Research Inc   (United States)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

CD AFM; CD SEM; Critical Dimension; LER; Line edge roughness; Line width roughness; LWR

Indexed keywords

CD-AFM; CD-SEM; CRITICAL DIMENSIONS; LER; LINE EDGE ROUGHNESS; LINE WIDTH ROUGHNESS; LWR;

ATOMIC FORCE MICROSCOPY; ETCHING; POLISHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SILICON WAFERS; SURFACE ROUGHNESS;

THICKNESS MEASUREMENT;

EID: 4344643528     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536812     Document Type: Conference Paper

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