Characterizing and understanding stray tilt: The next major contributor to CD SEM tool matching

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5038 I, Issue , 2003, Pages 518-527

  Solecky, Eric ^a   Archie, Chas ^a   Mayer, Jason ^a   Cornell, Roger ^b   Adan, Ofer ^b  

^a IBM MICROELECTRONICS   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

CD SEM; Matching; Precision; Stray tilt

Indexed keywords

CALIBRATION; ELECTRIC FIELDS; MAGNETIC FIELDS; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY;

PARASITIC MAGNETIC FIELD; STRAY TILT;

ELECTRON BEAM LITHOGRAPHY;

EID: 0141500247     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485033     Document Type: Conference Paper

References (6)

1. L. Reimer, Scanning Electron Microscopy - Physics of Image Formation and Microanalysis, Springer (1985, 1998)
2. CD tool matching specification taken from SIA roadmap, http://public.itrs.net/Files/2002Update/Home.pdf
3. "Characteristics of Accuracy for CD Metrology", Banke, G. W., IBM Microelectronics Div.; Archie, Charles N., IBM Advanced Semiconductor Technology Ctr., Proc. SPIE Vol 3677, p. 291-308, Metrology, Inspection, and Process Control for Microlithography XII 1999
4. "Scatterometry Measurement Precision and Accuracy Below 70nm", Sendelbach, M., IBM Microelectronics Div.; Archie, Charles N., IBM Advanced Semiconductor Technology Ctr., SPIE, Metrology, Inspection, and Process Control for Microlithography XVII 2003
5. A good tilt calibration wafer has the following characteristics: wide edge width and tall structures. This enables high sensitivity to beam tilt. This reduces beam and edge convolutions and top and bottom convolutions. This wafer also possesses very little line edge and sidewall roughness. Additionally, the height, non-vertical sidewalls and good uniformity of this wafer enable the determination of beam tilt with less than 0.1degree inaccuracy. Lastly, the height of certified sites is known and statistical sampling is used to minimize process variability contributions. Tracking the change in various edgewidths as a function of notch orientation determines the beam tilt.
6. "CD SEM Edge Width Applications and Analysis", Solecky, Eric, IBM Advanced Semiconductor Technology Ctr.; Cornell, Roger S., Applied Materials, Proc. SPIE Vol. 3677, p. 315-323, Metrology, Inspection, and Process Control for Microlithophy XIII 1999