메뉴 건너뛰기




Volumn 68, Issue 20, 1996, Pages 2861-2863

Carrier traps in a GaAs/AlxGa1-xAs single electron transistor

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0040264194     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116349     Document Type: Article
Times cited : (9)

References (17)
  • 9
    • 21544438265 scopus 로고    scopus 로고
    • D. V. Averin and K. K. Likharev, in Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1992), Chap. 9.
    • D. V. Averin and K. K. Likharev, in Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1992), Chap. 9.
  • 16
    • 21544453670 scopus 로고    scopus 로고
    • The ability to observe RTS with a variety of dwell times is limited by measurement conditions. The time constant of our measurement system makes it possible to observe RTS with a dwell time of less than 1 ms. Moreover, the sweep rate of the gate voltage limits observation of RTS with a dwell time of more than around 1 min.
    • The ability to observe RTS with a variety of dwell times is limited by measurement conditions. The time constant of our measurement system makes it possible to observe RTS with a dwell time of less than 1 ms. Moreover, the sweep rate of the gate voltage limits observation of RTS with a dwell time of more than around 1 min.
  • 17
    • 21544467366 scopus 로고    scopus 로고
    • G. D. Watkins, Adv. Solid State Phys. 24, 163 (1984).
    • G. D. Watkins, Adv. Solid State Phys. 24, 163 (1984).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.