Characterization of crystallographic properties of SMC poly Si using electron backscattered diffraction

Journal of Microscopy

Volumn 215, Issue 2, 2004, Pages 121-126

  Kim, D I ^a   Oh, K H ^a   Lee, H C ^a   Chang, Y J ^b,c   Sohn, W S ^b   Jang, J ^b  

^a Seoul National University   (South Korea)

^b Kyung Hee University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

CSL; Device characteristics; EBSD; ELA; Grain boundary energy; Misorientation; Pattern quality; Poly Si; Pseudo Kikuchi pattern; SMC; TFT crystallinity

Indexed keywords

ELECTRON DIFFRACTION; EXCIMER LASERS; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS; POLYSILICON;

C. THIN FILM TRANSISTOR (TFT); CRISTALLINITY; CSL; DEVICE CHARACTERISTICS; EBSD; EXCIMER LASER ANNEALING; GRAIN-BOUNDARY ENERGY; KIKUCHI PATTERNS; MISORIENTATIONS; PATTERN QUALITY; PSEUDO KIKUCHI PATTERN; SUICIDE MEDIATED CRYSTALLIZATION; THIN FILM TRANSISTOR CRYSTALLINITY;

THIN FILM TRANSISTORS;

SILICON DERIVATIVE;

ARTICLE; CRYSTALLIZATION; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; EXCIMER LASER; FILM; PRIORITY JOURNAL; SEMICONDUCTOR; STATISTICAL SIGNIFICANCE;

EID: 4344619193     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.0022-2720.2004.01360.x     Document Type: Article

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