Ferroelectric properties and leakage current mechanisms in SrBi 2(V0.1Nb0.9)2O9 (SBVN) thin films

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1505-1508

  Ezhilvalavan, S ^a   Samper, Victor ^a   Seng, Toh Wei ^b   Junmin, Xue ^b   Wang, John ^b  

^a INSTITUTE OF BIOENGINEERING AND NANOTECHNOLOGY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

A. Films; C. Electrical conductivity; C. Ferroelectric properties; D. Perovskites; E. Functional applications

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC CONDUCTIVITY; FERROELECTRICITY; LEAKAGE CURRENTS; MICROSTRUCTURE; MORPHOLOGY; NIOBIUM COMPOUNDS; PEROVSKITE; POLARIZATION; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; STRONTIUM COMPOUNDS; VANADIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

FUNCTIONAL APPLICATIONS; RATTLING SPACE; REMNANT POLARIZATION; SWITCHING CYCLES;

THIN FILMS;

EID: 4344613557     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.128     Document Type: Conference Paper

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