Results of benchmarking of advanced CD-SEMs at the 90nm CMOS technology node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 151-172

  Bunday, Benjamin D ^a   Bishop, Michael ^a   Allgair, John A ^b  

^a SEMATECH   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ISOLATED LINES; PROFILE MEASUREMENT; RESIST-BASED STRUCTURES; TOOL AUTOMATION;

AUTOMATION; ETCHING; PATTERN RECOGNITION; PRECISION ENGINEERING; PROJECT MANAGEMENT; REGULATORY COMPLIANCE;

MEASUREMENT THEORY;

EID: 4344606951     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.535960     Document Type: Conference Paper

References (20)

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2. International Technology Roadmap for Semiconductors, 2003 Edition, http://member.itrs.net.
3. Deleporte, A., Allgair, J., Archie, C., Banke, W., Bishop, M., Bunday, B., Choo, B., Dare, R., Laubmeier, R., Marchman, H., Postek, M., Raymond, C., Schlessinger, J., Singh, B., Vasconi, M., Vladar, A., and Yanof, A. 2001. Unified Advanced CD-SEM Specification for Sub-0.18 μm Technology (2000 Version) The specification can be viewed at www.sematech.org.
4. Deleporte, A., Allgair, J., Archie, C., Banke, W., Postek, M., Schlesinger, J., Vladar, A., and Yanof, A. 2000. Benchmarking of Advanced CD-SEMs against the New Unified Specification for sub-0.18 Micrometer Lithography. Proceedings of the SPIE 3998: pp. 12-27.
5. Bunday, B. and Bishop, M. 2001. Critical Dimension Scanning Electron Microscopy (CD-SEM) Benchmark for 2001. November, 2001. ISMI Confidential document. ISMI Technology Transfer Document #01104198A-ENG. Copy maybe obtained by Member Companies from Benjamin Bunday.
6. Bunday, B. and Bishop, M. 2002. Benchmarking of Advanced CD-SEMs at the 130 nm CMOS Technology Node. Proceedings of the SPIE 4689: pp. 102-115.
7. Bunday, B. "Benchmarking of Advanced Critical Dimension Scanning Electron Microscopes (CD-SEMs) at the 90 nm CMOS Technology Node". November, 2003. ISMI Confidential document. ISMI Technology Transfer Document #03054398B-ENG. Copy maybe obtained by Member Companies from Benjamin Bunday.
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12. Bunday, B., Bishop, M., Villarrubia, J., and Vladar, A. 2003. CD-SEM Measurement Line Edge Roughness Test Patterns for 193 nm Lithography. Proceedings of the SPIE 5038: pp. 674-688.
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15. Sullivan, N., Dixson, R., Bunday, B., Mastovich, M., Knutrud, P., Fabre, P., and Brandom, R. "Electron Beam Metrology of 193nm Resists at Ultra Low Voltage." Proceedings of the SPIE 5038: (2003) pp. 483-492.
16. Postek, M. T. and Vladar, A. E. 1998. Image sharpness measurement in scanning electron microscopy. Part 1. SCANNING 20:1-9.
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20. Villarrubia, J. S., Vladár, A. E., and Postek, M. T., "A Simulation Study of Repeatability and Bias in the CD-SEM," Proceedings of SPIE 5038, 2003, pp 138-149.