Characterization and performance of dielectric diffusion barriers for Cu metallization

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 223-226

  Chen, Zhe ^a   Prasad, K ^a   Li, C Y ^b   Su, S S ^b   Gui, D ^b   Lu, P W ^b   He, X ^b   Balakumar, S ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Cu metallization; Dielectric barrier

Indexed keywords

CU METALLIZATION; DIELECTRIC BARRIERS; INTER LAYER DIELECTRICS (ILD); INTER-METAL DIELECTRICS (IMD);

DIFFUSION; ELECTRIC POTENTIAL; ELECTRON SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLIZING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY;

DIELECTRIC FILMS;

EID: 4344597870     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.036     Document Type: Article

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