High-energy ion implantation: An alternative technology for micromachining three-dimensional GaAs structures

Sensors and Actuators, A: Physical

Volumn 114, Issue 2-3, 2004, Pages 505-509

  Miao, Jianmin ^a   Hartnagel, Hans L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

GaAs micromachining; Ion implantation; MEMS; Pressure sensors

Indexed keywords

ANNEALING; CAPACITANCE; ION IMPLANTATION; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; MICROSTRUCTURE; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON WAFERS; SOLUTIONS;

CORRUGATED MEMBRANES; HIGH-ENERGY ION IMPLANTATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4344590742     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.11.002     Document Type: Article

References (11)

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