Deep nitrogen implantation for GaAs microstructuring using pulsed electrochemical etching

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2923-2928

  Miao, Jianmin ^a   Hartnagel, Hans L ^b   Weiss, Bernard L ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BACKSCATTERING MEASUREMENT; CROSS-BRIDGE; CRYSTALLINE DAMAGE; DEEP ION IMPLANTATION; GAAS; GAAS SUBSTRATES; MAXIMUM BREAKDOWN VOLTAGE; MICRO STRUCTURING; NITROGEN IMPLANTATION; NITROGEN IONS; SEMI-INSULATING; SEMI-INSULATING GAAS; SURFACE LAYERS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTROCHEMICAL ETCHING; ELECTROMECHANICAL DEVICES; HETEROJUNCTION BIPOLAR TRANSISTORS; ION IMPLANTATION; MEMS; MICROSTRUCTURE; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM;

GALLIUM ARSENIDE;

EID: 0036734008     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498886     Document Type: Article

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