Interface structures of AlN/MgB2 thin films sputtered on sapphire c- and r-plane

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2343-2346

  Abe, H ^a   Naito, M ^a   Moon, W J ^b   Kaneko, K ^b   Saito, A ^c   Wang, Z ^d  

^a OSAKA UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c YAMAGATA UNIVERSITY   (Japan)

^d Kansai Advanced Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTALS; CURRENT DENSITY; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; ETCHING; ION BEAMS; JOSEPHSON JUNCTION DEVICES; LATTICE CONSTANTS; LEAKAGE CURRENTS; SAPPHIRE; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BARRIER-ELECTRODE INTERFACES; ION-BEAM ETCHING; QUASIPARTICLE TUNNELING; SAPPHIRE SUBSTRATES;

MAGNESIUM COMPOUNDS;

EID: 4344582252     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769601     Document Type: Article

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