Josephson tunneling properties in MgB2/AlN/NbN tunnel junctions

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7369-7372

  Saito, A ^a   Kawakami, A ^a   Shimakage, H ^a   Terai, H ^a   Wang, Z ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRITICAL CURRENTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON CYCLOTRON RESONANCE; ELECTRON TUNNELING; LEAKAGE CURRENTS; MAGNESIUM COMPOUNDS; NIOBIUM COMPOUNDS; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SPUTTERING; THIN FILMS;

JOSEPHSON TUNNELING;

TUNNEL JUNCTIONS;

EID: 0037115452     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1511827     Document Type: Article

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