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Volumn 30, Issue 7, 2004, Pages 1879-1883

Electrical properties of TaN-Cu nanocomposite thin films

Author keywords

B. Nanocomposites; Resistivity; TaN Cu; Thermal coefficient of resistivity; Thin film resistor

Indexed keywords

ANNEALING; COPPER COMPOUNDS; DEPOSITION; ELECTRIC CONDUCTIVITY; GRAIN GROWTH; NANOSTRUCTURED MATERIALS; NUCLEATION; SPUTTERING; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 4344576489     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.051     Document Type: Conference Paper
Times cited : (30)

References (9)
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  • 6
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    • Chang, C.C.1    Jeng, J.S.2    Chen, J.S.3
  • 7
    • 0031250083 scopus 로고    scopus 로고
    • Crystallographic and morphological characterization of reactively sputtered Ta, Ta-N, and Ta-N-O thin films
    • Stavrev M., Fischer D., Wenzel C. Crystallographic and morphological characterization of reactively sputtered Ta, Ta-N, and Ta-N-O thin films. Thin Solid Films. 307:1997;79-88.
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    • Amorphous alloy film formed in an immiscible Cu-Ta system by ion beam assisted deposition
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    • Zeng, F.1    Ding, M.2    Zhao, B.3    Pan, F.4
  • 9
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    • The role of aluminum in the crystallization of Cr-Si-Ni resistive films
    • Dong X., Wu J. The role of aluminum in the crystallization of Cr-Si-Ni resistive films. Mater. Sci. Eng. A. 339:2003;297-301.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.