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Materials Science and Engineering B

Volumn 47, Issue 2, 1997, Pages 161-166

Mechanism of stabilizing RuO2/Ta2N double layer thin film resistors

(2) Ma, Erming a Anderson, W A a

a UNIVERSITY OF MASSACHUSETTS (United States)

Author keywords

Auger electron spectroscopy; RuO2 Ta2N; Thin film resistors

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL ANALYSIS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); RUTHENIUM COMPOUNDS; TANTALUM COMPOUNDS; THERMAL EFFECTS; THIN FILM DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTION TRANSMISSION ELECTRON MICROSCOPY (XTEM); DEPTH PROFILING; ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS (ESCA); TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

RESISTORS;

EID: 0031167425 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(97)00031-7 Document Type: Article

Times cited : (8)

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