Photoelectric response of Schottky barrier in La0.7 Ca0.3 Mn O3 Nb:SrTi O3 heterojunctions

Applied Physics Letters

Volumn 92, Issue 18, 2008, Pages

  Luo, Z ^a   Gao, J ^a   Djurisic A B ^a   Yip, C T ^a   Zhang, G B ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PHOTOELECTRICITY; PULSED LASER DEPOSITION; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES;

BAND-TO-BAND EXCITATION; INCIDENT ENERGY; PHOTOELECTRIC RESPONSE;

HETEROJUNCTIONS;

EID: 43349102714     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2920765     Document Type: Article

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