Fermi level shift in la1-xSrxMO3 (M=Mn, Fe, Co, and Ni) probed by Schottky-like heteroepitaxial junctions with SrTi 0.99Nb0.01O3

Applied Physics Letters

Volumn 90, Issue 25, 2007, Pages

  Sawa, A ^a   Yamamoto, A ^a,b   Yamada, H ^a   Fujii, T ^e   Kawasaki, M ^e   Matsuno, J ^b,d   Tokura, Y ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^e JST ^*

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; FERMI LEVEL; LANTHANUM COMPOUNDS; SCHOTTKY BARRIER DIODES; TRANSITION METAL COMPOUNDS;

ATOMIC NUMBER; FERMI LEVEL SHIFT; HETEROEPITAXIAL JUNCTIONS; SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTOR JUNCTIONS;

EID: 34547342843     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749431     Document Type: Article

References (15)

1. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. 88, 027204 (2002).
2. N. Nakagawa, M. Asai, Y. Mukunoki, T. Susaki, and H. Y. Hwang, Appl. Phys. Lett. 86, 082504 (2005).
3. Y. Muraoka, T. Yamauchi, Y. Ueda, and Z. Hiroi, J. Phys.: Condens. Matter 14, L757 (2002);
4. Y. Muraoka, T. Muramatsu, J. Yamaura, and Z. Hiroi, Appl. Phys. Lett. 85, 2950 (2004);
5. T. Muramatsu, Y. Muraoka, and Z. Hiroi, Jpn. J. Appl. Phys., Part 1 44, 7367 (2005).
6. T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005); T. Fujii, M. Kawasaki, A. Sawa, Y. Kawazoe, H. Akoh, and Y. Tokura, Phys. Rev. B 75, 165101 (2007).
7. A. Yamamoto, A. Sawa, H. Akoh, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 90, 112104 (2007).
8. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
9. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
10. T. Yamamoto, S. Suzuki, H. Suzuki, K. Kawaguchi, K. Takahashi, and Y. Yoshisato, Jpn. J. Appl. Phys., Part 2 36, L390 (1997);
11. T. Yamamoto, S. Suzuki, K. Kawaguchi, and K. Takahashi, Jpn. J. Appl. Phys., Part 1 37, 4737 (1998).
12. A. Georges, G. Kotliar, W. Krauth, and M. J. Rozenberg, Rev. Mod. Phys. 68, 13 (1996).
13. A. Fujimori, A. Ino, J. Matsuno, T. Yoshida, K. Tanaka, and T. Mizokawa, J. Electron Spectrosc. Relat. Phenom. 124, 127 (2002).
14. J. Matsuno, A. Fujimori, Y. Takeda, and M. Takano, Europhys. Lett. 59, 252 (2002).
15. H. Wadati, D. Kobayashi, H. Kumigashira, K. Okazaki, T. Mizokawa, A. Fujimori, K. Horiba, M. Oshima, N. Hamada, M. Lippmaa, M. Kawasaki, and H. Koinuma, Phys. Rev. B 71, 035108 (2005).