Hot electron-induced MOS transconductance degradation

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 1995, Pages 10-14

  Yip, K L ^a   Wong, H ^a   Cheng, Y C ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRONS; FABRICATION; GATES (TRANSISTOR); OXIDES; SEMICONDUCTING SILICON; SUBSTRATES; TRANSCONDUCTANCE;

COULOMB SCATTERING; HOT ELECTRONS; NITRIDE OXIDE; THERMAL OXIDE; TRANSCONDUCTANCE DEGRADATION;

MOSFET DEVICES;

EID: 0029539881     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)