Structural and compositional analysis of strain relaxed InGaAs/InP multi quantum wells

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1908-1911

  Dhamodaran, S ^a   Pathak, A P ^a   Turos, A ^b,c   Kesavamoorthy, R ^d   Sundaravel, B ^d   Nair, K G M ^d   Arora, B M ^e  

^a UNIVERSITY OF HYDERABAD   (India)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^d INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^e TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

61.72.Dd; 68.37.Ps; 68.65. k; 82.80.Yc; AFM; HRXRD; Quantum wells; RBS

Indexed keywords

INDIUM PHOSPHIDE; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN RELAXATION; X RAY DIFFRACTION;

COMPOSITIONAL ANALYSIS; HIGH RESOLUTION X-RAY DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROMETRY; SATELLITE PEAKS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 43049179358     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.12.087     Document Type: Article

References (10)

1. Campbell J.C. In: Lin C. (Ed). Optoelectronic Technology and Lightwave Communication Systems (1989), Van Nostrand Reinhold, New York 363
2. Bachmann K.J., and Shay J.L. Appl. Phys. Lett. 32 (1978) 446
3. Groenen J., Landa G., Carles R., Pizani P.S., and Gendry M. J. Appl. Phys. 82 (1997) 803
4. Arora B.M., Chandrasekaran K.S., Gokhale M.R., Nair G., Venugopal Rao G., Amarendra G., and Viswanathan B. J. Appl. Phys. 87 (2000) 8444
5. Dhamodaran S., Sathish N., Pathak A.P., Khan S.A., Avasthi D.K., Srinivasan T., Muralidharan R., Kesavamoorthy R., and Emfietzoglou D D. J. Phys: Cond. Matt. 18 (2006) 4135
6. Suresh K., Sundaravel B., Panigrahi B.K., Nair K.G.M., and Viswanathan B. Rev. Sci. Instr. 75 (2004) 4891
7. Peiró F., Cornet A., Beck M., and Py M.A. Appl. Phys. Lett. 74 (1999) 3818
8. Chang S.Z., Lee S.C., Chen C.R., and Chen L.J. J. Appl. Phys. 75 (1994) 1511
9. J. Saarilahti, GISA Version 3.85, Semiconductor Laboratory, Technical Research Centre of Finland, Finland; Copyright © 1992-1994.
10. Turos A., Gaca J., Wojcik M., Nowicki L., Ratajczak R., Groetzschel R., Eichhorn F., and Schell N. Nucl. Instr. and Meth. B 219-220 (2004) 618