Virtues and pitfalls in structural analysis of compound semiconductors by the complementary use of RBS/channeling and high resolution X-ray diffraction

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 618-625

  Turos, A ^a,b   Gaca, J ^a   Wojcik, M ^a   Nowicki, L ^b   Ratajczak, R ^b   Groetzschel, R ^c   Eichhorn, F ^c   Schell, N ^c,d  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

Heterostructures; HRXRD; III V semiconductors; RBS channeling

Indexed keywords

ARSENIC; COMPOSITION; CRYSTAL DEFECTS; HETEROJUNCTIONS; ION IMPLANTATION; LATTICE CONSTANTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

HRXRD; III-V SEMICONDUCTORS; RADIATION DEFECTS; RBS/CHANNELING;

SEMICONDUCTOR MATERIALS;

EID: 2442618918     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.130     Document Type: Conference Paper

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