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Volumn , Issue , 2007, Pages 19-22

Ultra high power light-emitting diodes with electroplating technology

Author keywords

[No Author keywords available]

Indexed keywords

COPPER ELECTROPLATING; COPPER PLATING LAYERS; LUMINOUS INTENSITY;

EID: 43049157764     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2007.4450052     Document Type: Conference Paper
Times cited : (2)

References (8)
  • 1
    • 0026406592 scopus 로고    scopus 로고
    • S. Nakamura, T. Mukai and M. Senoh, High-Power GaN P-N Junction Blue-Light-Emitting, Jpn. J. Appl. Phys. ,30, no. 12A,pp. L1998-2001, 1991.
    • S. Nakamura, T. Mukai and M. Senoh, "High-Power GaN P-N Junction Blue-Light-Emitting," Jpn. J. Appl. Phys. ,vol. 30, no. 12A,pp. L1998-2001, 1991.
  • 2
    • 0028530007 scopus 로고    scopus 로고
    • F.A. Kish, D.A. DeFevere, D.A. Vanderwater,G.R. Trott, R.J. Weiss and J.S. Major, Jr.High luminous flux semiconductor wafer bonded AIGalnP/GaP large-area emitters, ELECTRONICS LETERS, 30, No. 21, p.p.1790-1792, 1994
    • F.A. Kish, D.A. DeFevere, D.A. Vanderwater,G.R. Trott, R.J. Weiss and J.S. Major, Jr."High luminous flux semiconductor wafer bonded AIGalnP/GaP large-area emitters," ELECTRONICS LETERS, Vol. 30, No. 21, p.p.1790-1792, 1994
  • 3
    • 34147161832 scopus 로고    scopus 로고
    • Lifetime Tests and Junction-Temperature Measurement of InGaN LightEmitting Diodes Using Patterned Sapphire Substrates
    • p.p
    • P. C. Tsai, Ricky W. Chuang, and Y. K. Su, "Lifetime Tests and Junction-Temperature Measurement of InGaN LightEmitting Diodes Using Patterned Sapphire Substrates," JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 25, NO. 2, p.p. 591-596, 2007
    • (2007) JOURNAL OF LIGHTWAVE TECHNOLOGY , vol.25 , Issue.2 , pp. 591-596
    • Tsai, P.C.1    Chuang, R.W.2    Su, Y.K.3
  • 4
    • 2342614846 scopus 로고    scopus 로고
    • Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate
    • p.p
    • B. S. Tan, S. Yuan, X. J. Kang, "Performance enhancement of InGaN light-emitting diodes by laser lift-off and transfer from sapphire to copper substrate," Applied Physics Letters, v 84, n 15, p.p. 2757-2759, 2004.
    • (2004) Applied Physics Letters , vol.84 , Issue.15 , pp. 2757-2759
    • Tan, B.S.1    Yuan, S.2    Kang, X.J.3
  • 5
    • 33947587499 scopus 로고    scopus 로고
    • Fabrication of Dicing-Free Vertical-Structured High-Power GaN-Based Light-Emitting Diodes With Selective Nickel Electroplating and Patterned Laser Liftoff Techniques
    • S.L. Chen, S.J. Wang, K.M. Uang, T.M. Chen, W.C. Lee, and B.W. Liou, "Fabrication of Dicing-Free Vertical-Structured High-Power GaN-Based Light-Emitting Diodes With Selective Nickel Electroplating and Patterned Laser Liftoff Techniques, "IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 6, p 351-353, 2007
    • (2007) IEEE PHOTONICS TECHNOLOGY LETTERS , vol.19 , Issue.6 , pp. 351-353
    • Chen, S.L.1    Wang, S.J.2    Uang, K.M.3    Chen, T.M.4    Lee, W.C.5    Liou, B.W.6
  • 6
    • 33646724491 scopus 로고    scopus 로고
    • O. Kuckmann, High power LED arrays special requirements on packaging technology, in Proc. of SPIE The Int. Soc. for Optical Engineering, 6134, p.p.613404(1)-613404(8), 2006
    • O. Kuckmann, "High power LED arrays special requirements on packaging technology," in Proc. of SPIE The Int. Soc. for Optical Engineering, vol. 6134, p.p.613404(1)-613404(8), 2006
  • 7
    • 33747736239 scopus 로고    scopus 로고
    • R. C. Jordan, J. Bauer, and H. Oppermann, Optimized heat transfer and homogeneous color converting for Ultra High Brightness LED Package, in Proc. of SPIE The Int. Soc. for Optical Engineering, Strasbourg, 6198, pp. 61980B1-61980B12, 2006.
    • R. C. Jordan, J. Bauer, and H. Oppermann, "Optimized heat transfer and homogeneous color converting for Ultra High Brightness LED Package," in Proc. of SPIE The Int. Soc. for Optical Engineering, Strasbourg, vol. 6198, pp. 61980B1-61980B12, 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.