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Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 433-438

Formation of vacancies and divacancies in plane-stressed silicon

(3) Nicolaysen, S a,b Ganchenkova, M G c Nieminen, R M c

a UNIVERSITY OF OSLO (Norway)

b Institute for Microsystem Technology (Norway)

c AALTO UNIVERSITY (Finland)

Author keywords

Ab initio; Divacancy; Silicon; Strain; Vacancy

Indexed keywords

DEFECTS; ELECTRONIC PROPERTIES; ENERGY GAP; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; STRESS ANALYSIS; VACANCIES;

AB INITIO; DEFECT FORMATION ENERGIES; DIVACANCIES; FIRST-PRINCIPLES APPROACHES; PLANE STRESS LOADING; STRAIN-INDUCED SHIFTS; STRUCTURE MODIFICATION; THERMAL IONIZATION;

STRAIN;

EID: 33750367676 PISSN: 10120394 EISSN: 16629779 Source Type: Book Series
DOI: 10.4028/www.scientific.net/SSP.108-109.433 Document Type: Conference Paper

Times cited : (4)

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