Effect of defects on electrical properties of 4H-SiC Schottky diodes

Materials Science and Engineering C

Volumn 28, Issue 5-6, 2008, Pages 799-804

  Ben Karoui, M ^a   Gharbi, R ^a   Alzaied, N ^b   Fathallah, M ^b   Tresso, E ^c   Scaltrito, L ^c   Ferrero, S ^c  

^a UNIVERSITY OF TUNIS   (Tunisia)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

^c POLITECNICO DI TORINO   (Italy)

Author keywords

Defects; Electrical characterization; Morphological characterization; Schottky diode; Silicon carbide

Indexed keywords

DEFECTS; ELECTRIC PROPERTIES; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

4H-SIC SCHOTTKY DIODES; MORPHOLOGICAL CHARACTERIZATION;

SCHOTTKY BARRIER DIODES;

EID: 42949178915     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2007.10.023     Document Type: Article

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