Effects of interface bonding configuration on photoluminescence of ZnO quantum dots-SiOxNy nanocomposite films

Journal of Materials Research

Volumn 23, Issue 4, 2008, Pages 1155-1162

  Peng, Yu Yun ^a   Hsieh, Tsung Eong ^a   Hsu, Chia Hung ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

HOLE-TRAPPING PROCESS; INTERFACE BONDING CONFIGURATION; NANOCOMPOSITE FILMS; RADIO FREQUENCY SPUTTERING;

NANOCOMPOSITES;

EID: 42949101998     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0134     Document Type: Article

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