Unoccupied Mott-Hubbard state on the (√3 × √3)R30° reconstructed 4H-SiC(0001) surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 20, 2004, Pages

  Ostendorf, R ^a   Wulff, K ^a   Benesch, C ^a   Merz, H ^a   Zacharias, H ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE;

ARTICLE; AUGER ELECTRON SPECTROSCOPY; ELECTRON; MATHEMATICAL ANALYSIS; PHYSICOCHEMICAL MODEL; SEMICONDUCTOR; SURFACE PROPERTY; THERMAL CONDUCTIVITY;

EID: 42749106968     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.205325     Document Type: Article

References (28)

1. B. Wenzien, P. Käckell, F. Bechstedt, and G. Cappellini, Phys. Rev. B 52, 10 897 (1995).
2. C. H. Park, B.-H. Cheong, K.-H. Lee, and K. J. Chang, Phys. Rev. B 49, 4485 (1994).
3. B. Kaczer, H.-J. Im, J. P. Pelz, J. Chen, and W. J. Choyke, Phys. Rev. B 57, 4027 (1998).
4. I. Shalish, I. B. Altfeder, and V. Narayanamurti, Phys. Rev. B 65, 073104 (2002).
5. F. Owman and P. Mårtensson, Surf. Sci. 330, L639 (1995).
6. L. Li and I. Tsong, Surf. Sci. 351, 141 (1996).
7. U. Starke, J. Schardt, J. Bernhardt, M. Franke, and K. Heinz, Phys. Rev. Lett. 82, 2107 (1999).
8. A. Coati, M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, T. Argunova, and K. Aïd, Phys. Rev. B 59, 12 224 (1999).
9. J. E. Northrup and J. Neugebauer, Phys. Rev. B 52, R17 001 (1995).
10. M. Sabisch, P. Krüger, and J. Pollmann, Phys. Rev. B 55, 10 561 (1997).
11. J. E. Northrup and J. Neugebauer, Phys. Rev. B 57, R4230 (1998).
12. J. Furthmüller, F. Bechstedt, H. Hüsken, B. Schröter, and W. Richter, Phys. Rev. B 58, 13 712 (1998).
13. M. Rohlfing and J. Pollmann, Phys. Rev. Lett. 84, 135 (2000).
14. V.I. Anisimov, A. E. Bedin, M. A. Korotin, G. Santoro, S. Scandolo, and E. Tosatti, Phys. Rev. B 61, 1752 (2000).
15. L. Johansson, F. Owman, and P. Mårtensson. Surf. Sci. 360, L478 (1996).
16. P.-A. Glans and L. Johansson, Surf. Sci. 465, L759 (2000).
17. L. Duda, Ph.D. thesis, Universität Dortmund, 2000.
18. J.-M. Tbemlin, I. Forbeaux, V. Langlais, H. Belkhir, and J.-M. Debever, Europhys. Lett. 39, 61 (1997).
19. I. Forbeaux, J.-M. Themlin, V. Langlais, L. M. Yu, H. Belkhir, and J.-M. Debever, Surf. Rev. Lett. 5, 193 (1998).
20. C. Benesch, M. Fartmann, and H. Merz, Phys. Rev. B 64, 205314 (2001).
21. V. Ramachandran and R. M. Feenstra, Phys. Rev. Lett. 82, 1000 (1999).
22. J. Ahn, S. Lee, N. Kim, C. Hwang, J. Min, and J. Chung, Surf. Sci. 516, L529 (2002).
23. M. Wiets, M. Weinelt, and T. Fauster, Phys. Rev. B 68, 125321 (2003).
24. P. W. Erdman and E. C. Zipf, Rev. Sci. Instrum. 53, 225 (1982).
25. D. Funnemann and H. Merz, J. Phys. E 19, 554 (1986).
26. R. Kaplan, Surf. Sci. 215, 111 (1989).
27. V. van Elsbergen, T. U. Kampen, and W. Mönch, Surf. Sci. 365, 443 (1996).
28. N. F. Mott, Metal-Insulator Transitions (Taylor and Francis, New York, 1974).