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Volumn 70, Issue 3, 2004, Pages

Reflectance difference spectroscopy of GaAs(001) under a [110] uniaxial stress

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE;

EID: 42749100604     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.035306     Document Type: Article
Times cited : (15)

References (44)
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    • Kita, T.1    Wada, O.2    Nakayama, T.3    Murayama, M.4
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    • M. J. Begarney, L. Li, C. H. Li, D. C. Law, Q. Fu, and R. F. Hicks, Phys. Rev. B 62, 8092 (2000); Akihiro Ohtake and Nobuyuki Koguchi, Appl. Phys. Lett. 83, 5193 (2003).
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    • Ohtake, A.1    Koguchi, N.2
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    • R. E. Balderas-Navarro, K. Hingerl, A. Bonanni, H. Sitter, and D. Stifter, Appl. Phys. Lett. 78, 3615 (2001); Y. H. Chen, Z. G. Wang, J. J. Qian, and Z. Yang, J. Appl. Phys. 88, 1695 (2000).
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    • Chen, Y.H.1    Wang, Z.G.2    Qian, J.J.3    Yang, Z.4
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    • edited by S. Amelinckx and J. Nihoul (North-Holland, Amsterdam)
    • K. Sangwal, in Defects in Solids, edited by S. Amelinckx and J. Nihoul (North-Holland, Amsterdam, 1987), Vol. 15, p. 427.
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    • Sangwal, K.1
  • 34
    • 33646647481 scopus 로고    scopus 로고
    • note
    • 2 is commonly accepted to be formed by a dominant transition of ∑ symmetry and four weaker transitions of X symmetry. These last four do not contribute to reflectance anisotropy.
  • 40
    • 0010630830 scopus 로고
    • edited by M. Balkanski (North-Holland, Amsterdam)
    • D. E. Aspnes, in Handbook on Semiconductors, edited by M. Balkanski (North-Holland, Amsterdam, 1980), Vol. 2, p. 121.
    • (1980) Handbook on Semiconductors , vol.2 , pp. 121
    • Aspnes, D.E.1
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.