Influence of the reconstruction of GaAs (0 0 1) on the electro-optical bulk properties

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 254-258

  Pristovsek, Markus ^a   Tsukamoto, S ^a   Han, B ^b   Zettler, J T ^b   Richter, W ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Doping; A1. Reflectance anisotropy spectroscopy; A1. Surfaces; B1. Gallium arsenide

Indexed keywords

ANISOTROPY; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTROOPTICAL EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY;

REFLECTANCE ANISOTROPY;

GALLIUM COMPOUNDS;

EID: 0037291814     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02044-4     Document Type: Conference Paper

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