Effects of incomplete ionization of impurity dopants on the performance of bipolar junction transistors

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 318-320

[No Author Info available]

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; COMPUTER SIMULATION; CRYSTAL IMPURITIES; CURRENT DENSITY; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; IONIZATION OF SOLIDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTORS; DELAY TIME; ELECTRON DIFFUSION COEFFICIENT; IMPURITY DOPANTS; QUASINEUTRAL BASE;

BIPOLAR TRANSISTORS;

EID: 0040748206     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00173-5     Document Type: Article

References (6)

1. S. M. Sze, Semiconductor Device Physics and Modeling, 2nd Edn. Wiley, New York (1981).
2. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd Edn. Wiley, New York (1986).
3. Y. Yue, J. J. Liou and A. Ortiz-Conde, Japan J. Appl. Phys. 34, 2286 (1995).
4. J. S. Blakemore, Semiconductors Statistics. Dover, New York (1982).
5. J. J. Liou, Advanced Semiconductor Device Physics and Modeling. Artech House, Inc., Boston (1994).
6. MEDICI Manual, Technology Modeling Associates, Inc. (1993).