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Journal of Crystal Growth

Volumn 268, Issue 3-4 SPEC. ISS., 2004, Pages 359-363

Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment

(3) Ravi, M R a DasGupta, Amitava a DasGupta, Nandita a

a INDIAN INSTITUTE OF TECHNOLOGY MADRAS (India)

Author keywords

A1. Sulfur passivation; A1. Surface recombination; B1. Polyimide; B3. Photodetector

Indexed keywords

CAPACITANCE; CHEMICAL BONDS; ELECTRIC CURRENTS; PASSIVATION; POLYIMIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SENSITIVITY ANALYSIS; SILICON NITRIDE; SULFUR;

SULFUR PASSIVATION; SURFACE RECOMBINATION;

PHOTODETECTORS;

EID: 3142687597 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.04.054 Document Type: Conference Paper

Times cited : (24)

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