Strain-induced leakage current in high-k gate oxides simulated with first-principles calculation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2005, Issue , 2005, Pages 331-334

  Moriya, Hiroshi ^a   Iwasaki, Tomio ^a   Miura, Hideo ^b  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; OXIDES; STRAIN; TENSILE STRENGTH;

FIRST-PRINCIPLES CALCULATION; STRAIN-INDUCED LEAKAGE CURRENT;

LEAKAGE CURRENTS;

EID: 33845863397     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/sispad.2005.201540     Document Type: Conference Paper

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