High temperature operation of optically pumped InGaN/GaN MQW heterostructures lasers grown on Si substrates

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-January, Issue , 2003, Pages 141-142

  Lutsenko, E V ^a   Pavlovskii, V N ^a   Zubialevich, V Z ^a   Gurskii, A L ^a   Ryabtsev, A G ^a   Ryabtsev, G I ^a   Yablonskii, G P ^a   Dikme, Y ^b   Szymakowski, A ^b   Kalisch, H ^b   Jansen, R H ^b   Schineller, B ^c   Heuken, M ^b,c  

^a INSTITUTE FOR MATHEMATICS   (Belarus)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

Epitaxial growth; Gallium nitride; Laser excitation; Optical pumping; Pump lasers; Quantum well devices; Quantum well lasers; Radiative recombination; Stimulated emission; Temperature

Indexed keywords

EFFICIENCY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; LASER EXCITATION; OPTICAL PUMPING; OPTICALLY PUMPED LASERS; PUMPING (LASER); QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; STIMULATED EMISSION; TEMPERATURE;

EMISSION CHARACTERISTICS; EXCITATION LEVELS; INTERNAL QUANTUM EFFICIENCY; NON-RADIATIVE RECOMBINATIONS; PUMP LASER; QUANTUM WELL DEVICE; RADIATIVE RECOMBINATION; RECOMBINATION EFFICIENCY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84943518369     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.2003.1239946     Document Type: Conference Paper

References (5)

1. E.V. Lutsenko, V.N. Pavlovskii, V.Z. Zubialevich et al. Phys.Stat.Sol.(c), (2002) 0, p. 272.
2. G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii et al. Phys.Stat.Sol.(a), (2002) 192, p. 54.
3. A.G. Ryabtsev, G.I. Ryabtsev, E.V. Lutsenko et al. Phys.Stat.Sol.(c), (2002) 0, p. 479.
4. G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii et al. Appl. Phys. Lett. (2001) 79, p. 1953.
5. S. Bidnyk, T. J. Schmidt, Y. H. Cho et al. Appl. Phys. Lett. (1998) 72, p. 1623.