Calculation of induced electron states in three-dimensional semiconductor artificial molecules

Computer Physics Communications

Volumn 147, Issue 1-2, 2002, Pages 209-213

  Li, Yiming ^a   Voskoboynikov, O ^b,c   Lee, C P ^c   Sze, S M ^a,c  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Computer simulation; Electron energy levels; Nonlinear iteration algorithm; Semiconductor artificial molecules

Indexed keywords

ALGORITHMS; BOUNDARY CONDITIONS; COMPUTER SIMULATION; EIGENVALUES AND EIGENFUNCTIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FINITE ELEMENT METHOD; GROUND STATE; HAMILTONIANS; ITERATIVE METHODS; MOLECULES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; WAVE EQUATIONS;

SEMICONDUCTOR ARTIFICIAL MOLECULES;

BAND STRUCTURE;

EID: 0036681788     PISSN: 00104655     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0010-4655(02)00247-3     Document Type: Article

References (12)