Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots

Superlattices and Microstructures

Volumn 21, Issue 4, 1997, Pages 509-516

  Guasch, C ^a,d   Sotomayor Torres, C M ^a,d   Ledentsov, N N ^b   Bimberg, D ^b   Ustinov, V M ^c   Kop'ev, P S ^c  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

^d UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

InAs; Photoluminescence; Quantum dots

Indexed keywords

EXCITONS; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

MODULATION DOPED QUANTUM DOTS; RESONANT PHOTOLUMINESCENCE;

PHOTOLUMINESCENCE;

EID: 0030704480     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0141     Document Type: Article

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