Fast gate drive for SiC-JFET using a conventional driver for MOSFETs and additional protections

IECON Proceedings (Industrial Electronics Conference)

Volumn 1, Issue , 2004, Pages 938-943

  Orellana, Alvaro ^a   Piepenbreier, Bernhard ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL DRIVE; FAST GATE DRIVE; SWITCHING PROCESS;

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY DISSIPATION; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; OVERVOLTAGE PROTECTION; SWITCHING; TEMPERATURE CONTROL;

SILICON CARBIDE;

EID: 20544471408     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2004.1433441     Document Type: Conference Paper

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